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Freescale Semiconductor Technical Data
Document Number: MRF7S21170H Rev. 1, 6/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 31% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 170 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 170 W CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S21170HR3 MRF7S21170HSR3
2110 - 2170 MHz, 50 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF7S21170HR3
CASE 465C - 02, STYLE 1 NI - 880S MRF7S21170HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 200 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 170 W CW Case Temperature 73C, 25 W CW Symbol RJC Value (1,2) 0.31 0.36 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF7S21170HR3 MRF7S21170HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 Adc) Gate Quiescent Voltage (1) (VDS = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 0.9 703 -- -- pF pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.15 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 500 Adc Adc nAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f= 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Video Bandwidth (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Part - to - Part Phase Variation @ Pout = 170 W CW Gain Variation over Temperature Output Power Variation over Temperature Gps D PAR ACPR IRL VBW -- 25 -- 15 29 5.7 -- -- 16 31 6.1 - 37 - 15 18 -- -- - 35 -9 dB % dB dBc dB MHz
Typical Performances (In Freescale Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110 - 2170 MHz Bandwidth
G P1dB
-- -- --
18 0.015 0.01
-- -- --
dB/C dBm/C
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output.
MRF7S21170HR3 MRF7S21170HSR3 2 RF Device Data Freescale Semiconductor
R1 VBIAS
Z17 VSUPPLY + R2 C1 C2 Z7 C8 C10 C12 C13
R3 RF INPUT Z1 C3 C5 C6 C4 Z2 Z3 Z4 Z5 Z6 Z8
Z9 Z10 Z11 Z12 Z13 Z14 Z15 RF Z16 OUTPUT
C17
DUT C14 Z18 C15 C16
C18
C7
C9
C11
Z1 Z2* Z3* Z4* Z5* Z6 Z7 Z8 Z9 Z10
0.250 x 0.083 Microstrip 0.090 x 0.083 Microstrip 0.842 x 0.083 Microstrip 0.379 x 0.083 Microstrip 0.307 x 0.083 Microstrip 0.119 x 0.787 Microstrip 1.160 x 0.080 Microstrip 0.156 x 0.787 Microstrip 0.770 x 0.880 Microstrip 0.459 x 1.000 Microstrip
Z11 Z12* Z13* Z14* Z15* Z16 Z17, Z18 PCB
0.060 x 0.076 Microstrip 0.129 x 0.083 Microstrip 0.436 x 0.083 Microstrip 0.490 x 0.083 Microstrip 0.275 x 0.083 Microstrip 0.230 x 0.083 Microstrip 0.900 x 0.080 Microstrip Taconix TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2, C3, C7, C8, C17, C18 C4, C15 C5 C6 C9, C10, C11, C12 C13 C14 C16 R1, R2 R3 Description 100 pF 100B Chip Capacitor 6.8 pF 600B Chip Capacitors 0.3 pF 700B Chip Capacitors 0.8 pF 600B Chip Capacitor 0.2 pF 700B Chip Capacitor 10 F Chip Capacitors 470 F, 63 V Electrolytic Capacitor, Radial 0.4 pF 700B Chip Capacitor 0.1 pF 700B Chip Capacitor 10 k, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number 100B101JW500XT 600B6R8BT500XT 700B0R3BW500XT 600B0R8BT500XT 700B0R2BW500XT C5750X5R1H106MT 13661471 700B0R4BW500XT 700B0R1BW500XT Manufacturer ATC ATC ATC ATC ATC TDK Philips ATC ATC
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 3
R2 R1 C1 C2 C8
C13
C10 C12 R3
C4
C17
CUT OUT AREA
C3
C5
C6
C14
C15
C16
C18
C9
C11
C7
MRF7S21170H Rev 0
Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout
MRF7S21170HR3 MRF7S21170HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) -5 PARC (dB) -10 -15 -20 -25 D, DRAIN EFFICIENCY (%) -5 PARC (dB) -10 -15 -20 -25 2100 mA IDQ = 700 mA -40 1400 mA -50 1050 mA -60 1 10 100 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 1750 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 17 16 Gps, POWER GAIN (dB) 15 14 13 IRL 12 11 10 PARC D VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps 36 34 32 30 28 0 -1 -2 -3 2220
9 2060
2080
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg.
17 16 Gps Gps, POWER GAIN (dB) 15 14 13 12 11 10 PARC 9 2060 2080 2100 2120 2140 2160 2180 2200 -5 2220 IRL D VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) 40 38 36 -2 -3 -4 44 42
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 84 Watts Avg.
18 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2100 mA 17 Gps, POWER GAIN (dB) 1750 mA 16 1400 mA 1050 mA -10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20
-30
15
14 13
700 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-10 VDD = 28 Vdc, IDQ = 1400 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 1 IM5-U IM5-L IM7-U IM7-L 10 TWO-TONE SPACING (MHz) 100 IM3-L IM3-U VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz
-20
-30
-40 3rd Order -50 5th Order -60 1 10 7th Order 100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON THE CCDF (dB) 0 -1 -2 -3 -3 dB = 83.111 W -4 -5 20 -1 dB = 43.335 W -2 dB = 61.884 W
Figure 8. Intermodulation Distortion Products versus Tone Spacing
54 Ideal D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) 48 42 36 30 Actual 24 18 120
VDD = 28 Vdc, IDQ = 1400 mA f = 2140 MHz, Input PAR = 7.5 dB 40 60 80 100
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
19 -30_C Gps, POWER GAIN (dB) 18 17 16 15 14 13 1 10 100 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 1400 mA f = 2140 MHz Gps TC = -30_C 25_C 85_C 25_C 85_C 40 30 20 10 0 400 50 60
D
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
MRF7S21170HR3 MRF7S21170HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
17 MTTF FACTOR (HOURS x AMPS2) 280 IDQ = 1400 mA f = 2140 MHz Gps, POWER GAIN (dB) 16
109
108
15
107
14 VDD = 24 V 13 0 100 200 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V
106 90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 11. Power Gain versus Output Power
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Output Signal 0.1 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Input Signal
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 -9 -ACPR in 30 kHz Integrated BW
3.84 MHz Channel BW
+ACPR in 30 kHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
-7.2 -5.4 -3.6 -1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 7
Zo = 10 f = 2220 MHz Zload Zsource f = 2060 MHz f = 2220 MHz f = 2060 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 4.57 - j10.70 4.57 - j10.38 4.57 - j10.06 4.52 - j9.72 4.40 - j9.42 4.15 - j9.12 4.44 - j8.82 4.19 - j8.53 4.12 - j8.23 Zload W 1.02 - j3.54 0.99 - j3.34 0.96 - j3.14 0.93 - j2.94 0.92 - j2.76 0.91 - j2.59 0.89 - j2.42 0.88 - j2.25 0.88 - j2.09
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
MRF7S21170HR3 MRF7S21170HSR3 8 RF Device Data Freescale Semiconductor
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF7S21170HR3 MRF7S21170HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRF7S21170HR3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRF7S21170HSR3R3
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 11
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MRF7S21170HR3 MRF7S21170HSR3
Rev. 12 1, 6/2006 Document Number: MRF7S21170H
RF Device Data Freescale Semiconductor

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